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| DSEC 30-02A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x 15 A VRRM = 200 V trr = 25 ns A VRSM V 200 VRRM V 200 Type A C TO-247 AD DSEC 30-02A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Test Conditions TC = 150C; rectangular, d = 0.5 TC = 115C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 2.5 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 50 15 30 140 0.8 0.3 -55...+175 175 -55...+150 A A A A mJ A C C C W Nm g Applications Features International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25C mounting torque typical 95 0.8...1.2 6 Symbol IR Test Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 15 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 100 0.5 0.85 1.05 1.6 0.25 A mA V V K/W K/W ns 4.4 A VF RthJC RthCH trr IRM Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders IF = 1 A; -di/dt = 100 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 25 A; -diF/dt = 100 A/s TVJ = 100C 25 3.5 Advantages Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. Dimensions see Outlines.pdf 1-2 (c) 2003 IXYS All rights reserved 311 DSEC 30-02A 50 A 40 IF 30 TVJ = 150C TVJ = 100C TVJ = 25C 20 Qr 700 nC 600 500 30 TVJ = 100C VR = 100 V IRM IF = 30 A 20 15 10 5 0 A/s 1000 -diF/dt 0 IF = 15 A IF = 7.5 A A 25 TVJ = 100C VR = 100 V IF = 30 A IF = 15 A IF = 7.5 A 400 300 200 10 100 0 0.0 0 100 D4 200 400 600 A/s 1000 800 -diF/dt 0.4 0.8 1.2 V VF 1.6 Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr Fig. 3 Typ. peak reverse current IRM 1.4 80 ns TVJ = 100C VR = 100 V IF = 30 A 60 IF = 15 A IF = 7.5 A 40 tfr V 30 VFR 20 VFR 1.2 Kf 1.0 trr 70 0.40 s 0.35 tfr 0.30 0.25 0.20 50 IRM 0.8 40 Qr 0 40 80 120 C 160 TVJ 10 TVJ = 100C IF = 15 A 0.15 0.10 0.05 0.6 30 0 200 400 600 A/s 800 -diF/dt 1000 0 0 200 400 0.00 600 A/s 1000 800 diF/dt Fig. 4 Typ. dynamic parameters Qr, IRM Fig. 5 Typ. recovery time trr versus -diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr 10 K/W 1 ZthJC 0.1 0.01 0.001 0.00001 DSEC 30-02A 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case 311 (c) 2003 IXYS All rights reserved 2-2 |
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